Kingston Memory KSM26RD4/32MRR 32GB 2666MHz DDR4 ECC Registered CL19 DIMM 2Rx4 Micron R Rambus Retai
Kingston"s KSM26RD4/32MRR is a 4G x 72-bit (32GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/parity, 2Rx4, ECC, memory module, based on thirty-six 2G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD = 1.2V
• VDDQ = 1.2V
• VPP = 2.5V
• VDDSPD = 2.41V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
46.25ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
Maximum Operating Power
See IDD Table
UL Rating
94 V - 0
Operating Temperature
0o C to +85o C
Storage Temperature
-55o C to +100o C
Module Assembly
DRAM:
MICRON (R-DIE)
RCD:
Rambus
Item Dimension (L inchxW inchxH inch)
6 x 2 x 1
Weight
1.00 lb
Warranty Information
Lifetime
FEATURES
• Power Supply: VDD = 1.2V
• VDDQ = 1.2V
• VPP = 2.5V
• VDDSPD = 2.41V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
46.25ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
Maximum Operating Power
See IDD Table
UL Rating
94 V - 0
Operating Temperature
0o C to +85o C
Storage Temperature
-55o C to +100o C
Module Assembly
DRAM:
MICRON (R-DIE)
RCD:
Rambus
Item Dimension (L inchxW inchxH inch)
6 x 2 x 1
Weight
1.00 lb
Warranty Information
Lifetime
Основні характеристики | |
Тип | Оперативна пам'ять |
Виробник | Kingston |
Форм-фактор пам'яті | DIMM |
Тип пам'яті | DDR4 |
Обсяг пам'яті | 32 Гб |
Кількість модулів | 1 |
Частота пам'яті, МГц | 2666 |
Таймінги | CL19 |
Гарантія | |
Гарантія | 24 міс. |
* Характеристики, комплект поставки та зовнішній вигляд товару можуть відрізнятися від зазначених і/або можуть бути змінені виробником без відображення в картці товару.